<正> The state-of-art piezoelectric measurements of piezoelectric thin films are given. The principles and advantages/disadvantages of the conventional techniques are reviewed in terms of particulars for piezoelectric-MEMS applications. Concerning a direct measurement of the piezoelectric coefficient and taking into account of 1.0~10.0μm in thickness of the films, a displacement of 0.1nm can't be reliably detected using the reverse piezoelectric effect, unless the probe's resolution reaches down to 10-3nm. The resolution of charge-integrator used in the scheme of direct piezoelectric measurement can't be worse than -0.1nC, typically. In such a sense, new demands on the techniques have been placed and a more careful selection of the techniques to be used is required.
Piezoelectric coefficient,thin films,MEMS
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