Piezoelectric coefficient measurement of piezoelectric thin films:an overview

【Author】

J.-M.Liui;H.L.W.Chan;C.L.Choy;Z.G.Liu;

【Abstract】

<正> The state-of-art piezoelectric measurements of piezoelectric thin films are given. The principles and advantages/disadvantages of the conventional techniques are reviewed in terms of particulars for piezoelectric-MEMS applications. Concerning a direct measurement of the piezoelectric coefficient and taking into account of 1.0~10.0μm in thickness of the films, a displacement of 0.1nm can't be reliably detected using the reverse piezoelectric effect, unless the probe's resolution reaches down to 10-3nm. The resolution of charge-integrator used in the scheme of direct piezoelectric measurement can't be worse than -0.1nC, typically. In such a sense, new demands on the techniques have been placed and a more careful selection of the techniques to be used is required.

【Keywords】

Piezoelectric coefficient,thin films,MEMS

References

To explore the background and basis of the node document

Springer Journals Database

Total: 24 articles

  • [1] F.S.Hickernell, Measurement techniques for evaluating piezoelectric thin films, Ultrasonics Symposium, 1996. Proceedings,
  • [2] V.Bharti; T.Kanra; R.Nath, Improved piezoelectricity in solvent-cast PVC films, IEEE Transactions on Dielectrics and Electrical Insulation,
  • [3] B.Jaber; D.Remiens; E.Cattan; P.Tronc; B.Thierry, Characterization of ferroelectric and piezoelectric properties of lead titanate thin films deposited on Si by sputtering, Sensors and Actuators A,
  • [4] F. Xu; F.Chu; and S.Trolier-McKinstry, Longitudinal piezoelectric coefficient measurement for bulk ceramics and thin films using pneumatic pressure rig, Journal of Applied Physics,

More>>

Similar documents

Documents that have the similar content to the node document

More>>