<正>The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis.A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement.The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-scaled FinFET's.
MOSFET;nm;Three Dimensional Analytical Subthreshold Model for Non-rectangular Cross-Section FinFETs;mode;
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