Xiaodi Liu,Dacheng Zhang,Ting Li,Wang Wei,Tian Dayu,Luo Kui Institute of Microelectronics,Peking University,Beijing 100871,China
<正>The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated.The tin oxide semiconductors were calcined at different temperature ranging from 400℃to 900℃.The testing results from SEM,XRD,XPS and HP4145B semiconductor analyzer show that the composition,crystallinity and the resistance of the thin films change with the variation of calcination temperature.
Tin oxide;;Thin film;;Sputtering
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