Luminescence Properties of Si 3N 4 Doped Nitride Sr 3SiO 5:Eu 2+ Phosphor

【Author】

ZHANG Shuang-Shuang;TIAN Wen-Yu;ZHANG Jian-Xin;SONG Kai-Xin;QIN Hui-Bin

【Institution】

Institute of Electron Device & Application, Hangzhou Dianzi University;Institute of Electron Device & Application, Hangzhou Dianzi University;Institute of Electron Device & Application, Hangzhou Dianzi University;Institute of Electron Device & Application, Hangzhou Dianzi University;Institute of Electron Device & Application, Hangzhou Dianzi University

【Abstract】

Si 3N 4 doped Sr 2.99SiO 5?6 x N 4 x :0.01Eu 2+phosphor samples were prepared by high temperature solid-state reaction method. Testing results of XRD, EDS and CHNS of the phosphor samples demonstrated that the nitrogen atoms could be incorporated into the host lattice of Sr 3SiO 5 through partial occupation of the oxygen atoms sites to form Sr 2.99SiO 5?6 x N 4 x :0.01Eu 2+solid solution. Under the excitation of 344 nm ultraviolet, the Sr 2.99SiO 5?6 x N 4 x :0.01Eu 2+phosphor samples emit orange light peaked at 580 nm, which originates from 4f 65d 1→4f 7 transitions of Eu 2+ions. With the increase of N 3+ concentration, the intensities of emission and excitation spectra of Sr 2.99SiO 5?6 x N 4 x :0.01Eu 2+ phosphor samples are obviously enhanced. The thermal stability testing results of the phosphor samples show that the incorporation of N 3? ions significantly improve the thermal stability better than that of undoped samples. The curves analyzed and fitted by the Arrhenius model indicate that the thermal quenching is caused by crossover process.

【Keywords】

Sr 3SiO 5;phosphors;Si 3N 4

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Total: 11 articles

  • [1] Meiyuan Wang;;Xia Zhang;;Zhendong Hao;;Xinguang Ren;;Yongshi Luo;;Xiaojun Wang;;Jiahua Zhang, Enhanced phosphorescence in N contained Ba 2 SiO 4 :Eu 2+ for X-ray and cathode ray tubes, Optical Materials,
  • [2] Philippe F. Smet;;Koen Van den Eeckhout;;Adrie J.J. Bos;;Erik van der Kolk;;Pieter Dorenbos, Temperature and wavelength dependent trap filling in M 2 Si 5 N 8 :Eu (M=Ca, Sr, Ba) persistent phosphors, Journal of Luminescence,
  • [3] Kaixin Song;;Fangfang Zhang;;Daqin Chen;;Song Wu;;Peng Zheng;;Qingming Huang;;Jun Jiang;;Junming Xu;;Huibin Qin, Enhancement of photoluminescence properties and modification of crystal structures of Si 3 N 4 doping Li 2 Sr 0.995 SiO 4 :0.005Eu 2+ phosphors, Materials Research Bulletin,
  • [4] Lakshminarasimhan, N.;;Varadaraju, U.V, White-light generation in Sr 2 SiO 4 :Eu<sup>2+</sup>, Ce<sup>3+</sup> under near-UV excitation: A novel phosphor for solid-state lighting, Journal of the Electrochemical Society, Journal of the Electrochemical Society (Journal of the Electrochemical Society)

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