Growth and Property of In:Ga 2O 3 Oxide Semiconductor Single Crystal

【Author】

TANG Hui-Li;WU Qing-Hui;LUO Ping;WANG Qing-Guo;XU Jun

【Institution】

School of Physics Science and Engineering, Tongji University;Shanghai Engineering Research Center for Sapphire Crystals;Shanghai Engineering Research Center for Sapphire Crystals;Shanghai Institute of Ceramics, Chinese Academy of Sciences;School of Physics Science and Engineering, Tongji University;Shanghai Engineering Research Center for Sapphire Crystals;School of Physics Science and Engineering, Tongji University;Shanghai Engineering Research Center for Sapphire Crystals;School of Physics Science and Engineering, Tongji University;Shanghai Engineering Research Center for Sapphire Crystals

【Abstract】

Ga 2O 3 crystal is a novel oxide semiconductor with wide bandgap, but its intrinsic conductive capability is poor. Ion doping is an effective way to regulate conductivity, transparency and crystallinity of the crystal. Transparent blue In:Ga 2O 3 single crystal with the dimension of φ8 mm × 50 mm was grown by optical floating zone method. The as-grown crystal is of good crystallization quality. After doping In 3+ ion, β-Ga 2O 3 crystal has strong infrared absorption, and its thermal conductivity slightly decreases. At room temperature, the electrical conductivity and carrier concentration of as-grown In:Ga 2O 3 crystal are 4.94 × 10 -4 S/cm and 1.005 × 10 16 cm -3, respectively, which are approximately one order magnitude higher than that of undoped β-Ga 2O 3 crystal. The electrical property of In:Ga 2O 3crystal is sensitive to heat treatment. After annealing at 1 200 °C in air or in argon, its electrical conductivity decreases. These experimental results suggest that In 3+ ion doping can improve the electrical property of β-Ga 2O 3 single crystal.

【Keywords】

In:Ga 2O 3 single crystal;optical floating zone method;electrical conductivity

References

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Total: 15 articles

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  • [3] Chen Wei-Chao;Tang Hui-Li;Luo Ping;Ma Wei-Wei;Xu Xiao-Dong;Qian Xiao-Bo;Jiang Da-Peng;Wu Feng;Wang Jing-Ya;Xu Jun;Shanghai Institute of Ceramics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;, Research progress of substrate materials used for GaN-Based light emitting diodes, Acta Physica Sinica,
  • [4] GUO Yanrui;YAN Huiyu;SONG Qinggong;CHEN Yifei;GUO Songqing;College of Science,Civil Aviation University of China;, First-principles Study on Electronic Structure and Optical Properties of Ti-dopedβ-Ga_2O_3, Materials Review,

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