Rare Earth Oxides on Property of Pressureless Sintered Si 3N 4 Ceramics

【Author】

DUAN Yu-Sen;ZHANG Jing-Xian;LI Xiao-Guang;HUANG Ming-Ming;SHI Ying;XIE Jian-Jun;JIANG Dong-Liang

【Institution】

State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences;School of Materials Science and Engineering, Shanghai University;State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences;State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences;State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences;School of Materials Science and Engineering, Shanghai University;School of Materials Science and Engineering, Shanghai University;School of Materials Science and Engineering, Shanghai University;State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences

【Abstract】

High thermal conductivity Si 3N 4 ceramic is a prospective substrate material for high-power electronic devices. In this paper, pressureless and liquid-phase sintering was proposed using Re 2O 3 (Re = Sm, Er, Lu) -TiO 2 as sintering additives to effectively reduce the cost for applications. The effects of the additive type and content on the microstructure, mechanical properties and thermal conductivity of the ceramic were investigated. The results show that the relative density, thermal conductivity and grain size of Si 3N 4 decrease gradually with the increase of Re ionic (Re 3+) radius. With the addition of Sm 2O 3, the highest density can only reach 3.14 g/cm 3, while the fracture toughness about 5.76 MPa .m 1/2 can be obtained when 8 wt% Sm 2O 3-TiO 2 is used. With 12 wt% Lu 2O 3-TiO 2 as sintering aid, Si 3N 4 ceramics show high density of 3.28 g/cm 3 as well as high fracture toughness, while the thermal conductivity is only 42 W/(m·K) due to the presence of large amount of second phase. The thermal conductivity of Si 3N 4 reaches 51.8 W/(m·K) with the addition of 8 wt% Er 2O 3-TiO 2, which can meet the requirement for substrate materials for power electronic device.

【Keywords】

rare earth oxide;silicon nitride;thermal conductivity;pressureless sintering

References

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Total: 18 articles

  • [1] Zhang Jie,Ning Xiaoshan,L(u|¨) Xin,Zhou Heping,Chen Kexin (State Key Laboratory of New Ceramics and Fine Processing,Department of Material Science and Engineering, Tsinghua University,Beijing 100084,China), Effect of Rare-Earth Additives on Thermal Conductivity,Mechanical and Electrical Properties of Silicon Nitride Ceramics, Rare Metal Materials and Engineering,
  • [2] XU Peng,YANG Jian,QIU Tai(College of Materials Science and Engineering,Nanjing University of Technology,Nanjing 210009,China), Research Progress of β-Si_3N_4 Ceramics with High Thermal Conductivity, Bulletin of the Chinese Ceramic Society,
  • [3] Wang Huiping; Zhou Shuzhu(Technical Center. Zhuzhou Cemented Carbide Plant), Carbothermic Reduction of TiO_2 in N Atmosphere ──A Study for Direct Compounding TiCN Solid Solution, RARE METALS AND CEMENTED CARBIDES,
  • [4] Yang Haitao;;Gao Ling;;Yuan Runzhang;;Yang Guotao;;Huang Peiyun, Effect of MgO/CeO 2 on pressureless sintering of silicon nitride, Materials Chemistry and Physics,

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