Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Diluted Magnetic Semiconductor Thin Films

【Author】

CHEN Wei-Bin;LIU Xue-Chao;ZHUO Shi-Yi;CHAI Jun;SHI Er-Wei

【Institution】

Shanghai Institute of Ceramics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Shanghai Institute of Ceramics, Chinese Academy of Sciences;Shanghai Institute of Ceramics, Chinese Academy of Sciences;Shanghai Institute of Ceramics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Shanghai Institute of Ceramics, Chinese Academy of Sciences

【Abstract】

Yb-doped ZnO thin films were prepared by inductively coupled plasma enhanced physical vapor deposition method, the as-deposited Zn 0.985Yb 0.015O thin films were irradiated by protons with different doses. X-ray diffraction, X-ray photoelectron spectroscopy, positron annihilation spectroscopy, and magnetic property measurement were used to study the defect and ferromagnetism. The magnetic property measurement results indicate that the saturation magnetization of Zn 0.985Yb 0.015O thin films increases with the increment of irradiation doses, and reaches the maximum value at 6 × 10 15 ions/cm 2. With the further increase in irradiation doses, the saturation magnetization decreases. The positron annihilation measurement reveals that Zn vacancy-related defects dominate in proton irradiated Zn 0.985Yb 0.015O thin films. It is found that the dependency of saturation magnetization on irradiation doses exhibits the same behavior with the amount of Zn vacancy-related defects on irradiation doses. It is experimentally demonstrated that the ferromagnetism of proton irradiated Yb-doped ZnO thin films is mainly influenced by the Zn vacancy-related defects.

【Keywords】

Yb-doped ZnO;proton irradiation;diluted magnetic semiconductor;ferromagnetism

References

To explore the background and basis of the node document

Springer Journals Database

Total: 21 articles

  • [1] LIU Xue-Chao, SHI Er-Wei, ZHANG Hua-Wei, SONG Li-Xin, CHEN Zhi-Zhan ( Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, China), Recent Progress in Developing ZnO-based Thin Films of Diluted Magnetic Semiconductors, Journal of Inorganic Materials,
  • [2] Chen Zhi-Quan 1) Kawasuso Atsuo 2) 1)(Department of Physics, Wuhan University, Wuhan 430072, China)2)(Japan Atomic Energy Agency, Gunma 370-1292, Japan), Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam, Acta Physica Sinica,
  • [3] Ning Shuai;Zhan Peng;Wang Wei-Peng;Li Zheng-Cao;Zhang Zheng-Jun;State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University;, Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field, Chinese Physics B,
  • [4] S. Gupta;;W.E. Fenwick;;A. Melton;;T. Zaidi;;H. Yu;;V. Rengarajan;;J. Nause;;A. Ougazzaden;;I.T. Ferguson, MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications, Journal of Crystal Growth,

More>>