The research for ESD thermal breakdown model of electronic device


K.P.Sun and M.Xu Electrostatic Institute of Shanghai Maritime University,Post Code:200135,Shanghai,China


<正>A physical model of electronic device's ESD thermal breakdown is proposed in this paper,and the two depth of PN junction's thermal breakdown was discussed and also discussed ESD breakdown voltage for different depth of PN junction.


technology of control ESD;;electrostatic discharge(ESD)


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Springer Journals Database

Total: 3 articles

  • [1] A. L. Ward, Calculation of electrical breakdown in air at near-atmospheric pressure, Phys. Rev,
  • [2] D. L. Lin, Electron multiplication and electrostatic discharge wave form, J. Allp. Phy,
  • [3] D. J. Colleman etc, Extension of the effective thickness theory of oxide breakdown, 27thAnn Proc. Int. Reliability Physics Symp,

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