Ao Jinping Pan Jing Cai Keli Zeng Qingming ( HeBei Semiconductor Research Institute, Shijiazhuang, HeBei)
<正> Using 1μm-gate InAIAs-InGaAs HEMT, BFL dynamic binary frequency divider was designed and successfully fabricated for the first time in our country. Their minimum and maximum operation frequency are 700MHz and 3. 18GHz, respectively. Power dissipation is 200mw at the maximum operation frequency.
HEMT;InGaAs;InAIAs-lnGaAs HEMT Dynamic Frequency Divider;
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