Fully Depleted SIMOX/SOI Gate Array ICs


Xing Zhang , Liqiong Wei, Yingxue Li, Lijiu Ji, Yangyuan Wang Institute of microelectronics, Peking University, Beijing 100871, P R.China.


<正> 1.5μm CMOS/SIMOX process has been developed for thin-film fully depleted CMOS gate array ICs. It was proved quantitatively from transistors and ring oscillators that the performance of TFD(Thin-film Fully Depleted) devices is better than non-FD devices. Using the gate array, a decipherer for space application and a prescaler have been obtained.


SOI;SIMOX;Fully Depleted SIMOX/SOI Gate Array ICs;Gate;


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Total: 3 articles

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