Fully Depleted SIMOX/SOI Gate Array ICs

【Author】

Xing Zhang , Liqiong Wei, Yingxue Li, Lijiu Ji, Yangyuan Wang Institute of microelectronics, Peking University, Beijing 100871, P R.China.

【Abstract】

<正> 1.5μm CMOS/SIMOX process has been developed for thin-film fully depleted CMOS gate array ICs. It was proved quantitatively from transistors and ring oscillators that the performance of TFD(Thin-film Fully Depleted) devices is better than non-FD devices. Using the gate array, a decipherer for space application and a prescaler have been obtained.

【Keywords】

SOI;SIMOX;Fully Depleted SIMOX/SOI Gate Array ICs;Gate;

References

To explore the background and basis of the node document

Springer Journals Database

Total: 3 articles

  • [1] N. Okuda,; M. Sugai, ;and N. Goto, "Semicustom and custom LSI technology, "Proceedings of the IEEE,
  • [2] Peter N. Dunn, "SOI: Ready to meet CMOS challenge?", Solid State Technology, Solid State Technology (Solid State Technology)
  • [3] G. G. Shahidi, "SOI: New opportunities for sub-0. 25μm VLSI,", Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials,

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