<正>In this work, we critically examine several importantaspects concerning ultra-thin oxide reliability. The time-orcharge-to-breakdown(T_(BD)/Q_(BD))measurements with highstatistical accuracy are carried out over a wide range of oxidethickness(T_(OX)),voltages,temperatures,and different teststructures.Thickness dependence of Weibull slopes and itsphysical interpretation based on a simple analytic model willbe reviewed.We also investigate the voltage-dependentvoltage acceleration using two independent experimentalmethods of long-term module stress and area scalingtechnique. In the context of voltage-dependent voltageacceleration,we experimentally resolve various seeminglycontradicting and confusing observations such as strongtemperature dependence of oxide breakdown observed onultra-thin oxides and temperature-independent voltageacceleration at a fixed T_(BD), and non-Arrhenius temperaturedependence found on ultra-thin oxides. Using a newlydeveloped kinetic approach for oxide breakdown, we proposea two-step hydrogen model as an alternative to explain theexperimental observations on voltage-dependent voltageacceleration and temperature dependence of oxide breakdown.
In;口口;New Global Insight in Ultra-Thin Oxide Reliability Using Accurate Experimental Methodology and Theoretical Modeling;TBD;line;口义;high;der;
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