DIELECTRIC PROPERTIES MEASUREMENT FOR INDIVIDUAL NANOWIRES IN III-V COMPOUND SEMICONDUCTORS

【Author】

Ji-Jung Kai, F.R. Chen, Chia-Chun Chen, Rong-Rang Huang, Gin-I Yen Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan 30043 Department of Chemistry, National Taiwan Normal University, Taipei, Taiwan 100

【Abstract】

<正> A new method is developed to measure the dielectric properties of wide band gap semiconductors using the low loss spectrum of electron energy loss spectroscopy (EELS) in a field emission gun transmission electron microscope (FEGTEM). With this technique, we are not only able to measure the dielectric properties of individual nanowires, but also, with the spectrum imaging technique, the two-dimensional mapping of the dielectric constant of a individual nanowire. The current work is focused on using this

【Keywords】

III;DIELECTRIC PROPERTIES MEASUREMENT FOR INDIVIDUAL NANOWIRES IN III-V COMPOUND SEMICONDUCTORS;

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