STRAIN RELAXATION IN SEMICODNCOTING QUANTUM DOTS

【Author】

J. Zou, X. Z. Liao D. J. H. Cockayne, Z.M. Jinag Australian Key Center for Microscopy & Microanalysis, The University of Sydney, Sydney, 2006, Australia Division of Materials Science & Technology, Los Alamos National Laboratory, Los Alamos, NM 87545, USA Department of Materials, University of Oxford, Oxford, OX1 3PH, England Surface Physics Laboratory, Fudan University, Shanghai 200433, China

【Abstract】

<正> Strain relaxation in semiconductor quantum dots has received enormous attention in the last decade because the semiconductor quantum dots open up possibilities for the production of a wide range of new opto/electronic devices. In this talk, strain relaxation mechanisms at the different stages of the growth and the post growth process of semiconductor quantum dots will be presented. In addition to strain relaxation through island formation during the growth of lattice-mismatched heterostructures, alloying is another effective way to release misfit strain. In a study of pure Ge deposited on

【Keywords】

STRAIN RELAXATION IN SEMICODNCOTING QUANTUM DOTS;

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