Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

【Author】

Muhammad Usman;Kiran Saba;Adnan Jahangir;Muhammad Kamran;Nazeer Muhammad;Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology;Department of Mathematics, COMSATS Institute of Information Technology;Department of Electrical Engineering, COMSATS Institute of Information Technology;

【Institution】

Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology;Department of Mathematics, COMSATS Institute of Information Technology;Department of Electrical Engineering, COMSATS Institute of Information Technology;

【Abstract】

The effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses.The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.

【Keywords】

Optoelectronic devices;;Photonic bandgap materials;;Visible and ultraviolet sources;;Light-emitting devices

References

To explore the background and basis of the node document

Springer Journals Database

Total: 40 articles

  • [1] Akinori Koukitu;;Naoyuki Takahashi;;Tetsuya Taki;;Hisashi Seki, Thermodynamic analysis of the MOVPE growth of In x Ga 1? x N, Journal of Crystal Growth,
  • [2] JoachimPiprek, Efficiency droop in nitride‐based light‐emitting diodes, phys. stat. sol. (a),
  • [3] Aur??lien David;Michael J. Grundmann, Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis, Applied Physics Letters,
  • [4] ümit ?zgür;Huiyong Liu;Xing Li;Xianfeng Ni;Hadis Morko?, GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels., Proceedings of the IEEE,

More>>